Single electron transistor (SET) is one of the most promising devices for nanoscale circuit design. In this paper, new low voltage low power programmable logic gate circuits using SE-MOSFET are presented. Devices that combine singleelectron and metal–oxide–semiconductor (MOS) transistors allows compact realization of basic logic function that exhibit periodic transfer characteristics. The proposed SE-MOSFET logic gates are useful for implementing binary logic circuits. The proposed programmable logic gate is verified by simulating the circuit using PSPICE. The results show that the operation of proposed circuit is in accordance with the theories.
Ahmed, S., Hamed, H., & Hasaneen, E. (2012). Low voltage low power programmable logic gate based on SE-MOSFET. The International Conference on Electrical Engineering, 8(8th International Conference on Electrical Engineering ICEENG 2012), 1-7. doi: 10.21608/iceeng.2012.30669
MLA
Soha Ahmed; Hesham F. A. Hamed; E. A. M. Hasaneen. "Low voltage low power programmable logic gate based on SE-MOSFET". The International Conference on Electrical Engineering, 8, 8th International Conference on Electrical Engineering ICEENG 2012, 2012, 1-7. doi: 10.21608/iceeng.2012.30669
HARVARD
Ahmed, S., Hamed, H., Hasaneen, E. (2012). 'Low voltage low power programmable logic gate based on SE-MOSFET', The International Conference on Electrical Engineering, 8(8th International Conference on Electrical Engineering ICEENG 2012), pp. 1-7. doi: 10.21608/iceeng.2012.30669
VANCOUVER
Ahmed, S., Hamed, H., Hasaneen, E. Low voltage low power programmable logic gate based on SE-MOSFET. The International Conference on Electrical Engineering, 2012; 8(8th International Conference on Electrical Engineering ICEENG 2012): 1-7. doi: 10.21608/iceeng.2012.30669
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