In this paper, a new transition between GaAs chip (Microstrip) and Aluminum motherboard (Microstrip) with a single interconnect and one common ground has been analyzed and investigated using Finite-Difference Time-Domain method. The objective is to optimize the package performance over a wide frequency band up to 50 GHz. This is carried out by performing a parametric analysis to study the effects of the transition interconnect (discontinuity) on the overall package performance. The scattering parameters of interconnect are used as a performance measure of package under investigation. Good results have been obtained up 50 GHz; S12/ S21 and S11/S22 are about -0.4 and -20 dB respectively.
Ghouz, H. (2010). Finite-Difference Time-Domain Analysis and Design of Transition Interconnects in Microstrip-to-Microstrip Package. The International Conference on Electrical Engineering, 7(7th International Conference on Electrical Engineering ICEENG 2010), 1-17. doi: 10.21608/iceeng.2010.32957
MLA
Hussein H. M. Ghouz. "Finite-Difference Time-Domain Analysis and Design of Transition Interconnects in Microstrip-to-Microstrip Package", The International Conference on Electrical Engineering, 7, 7th International Conference on Electrical Engineering ICEENG 2010, 2010, 1-17. doi: 10.21608/iceeng.2010.32957
HARVARD
Ghouz, H. (2010). 'Finite-Difference Time-Domain Analysis and Design of Transition Interconnects in Microstrip-to-Microstrip Package', The International Conference on Electrical Engineering, 7(7th International Conference on Electrical Engineering ICEENG 2010), pp. 1-17. doi: 10.21608/iceeng.2010.32957
VANCOUVER
Ghouz, H. Finite-Difference Time-Domain Analysis and Design of Transition Interconnects in Microstrip-to-Microstrip Package. The International Conference on Electrical Engineering, 2010; 7(7th International Conference on Electrical Engineering ICEENG 2010): 1-17. doi: 10.21608/iceeng.2010.32957