Abstract: In this paper, we propose a 1D numerical quantum simulator for symmetric gate-allaround nanowire transistors with cylindrical cross section within the effective mass approximation. The simulator is based on a self consistent Schrödinger-Poisson solver, using the finite difference method, in conjunction with a current model assuming ballistic behavior for the transistor. The solutions obtained were first verified analytically when it was available. Electron distribution profiles and I-V characteristics for transistors with different device parameters are numerically evaluated using the proposed simulator. The effects of quantum confinement and low dimensions on these characteristics are indicated.
Louis, D., Gamal, S., Farouk, W., & Omar, O. (2010). Ballistic Transport in Gate-All-Around Nanowire Transistors. The International Conference on Electrical Engineering, 7(7th International Conference on Electrical Engineering ICEENG 2010), 1-10. doi: 10.21608/iceeng.2010.33017
MLA
Dalia Selim Louis; S. H. Gamal; W. F. Farouk; O. A. Omar. "Ballistic Transport in Gate-All-Around Nanowire Transistors". The International Conference on Electrical Engineering, 7, 7th International Conference on Electrical Engineering ICEENG 2010, 2010, 1-10. doi: 10.21608/iceeng.2010.33017
HARVARD
Louis, D., Gamal, S., Farouk, W., Omar, O. (2010). 'Ballistic Transport in Gate-All-Around Nanowire Transistors', The International Conference on Electrical Engineering, 7(7th International Conference on Electrical Engineering ICEENG 2010), pp. 1-10. doi: 10.21608/iceeng.2010.33017
VANCOUVER
Louis, D., Gamal, S., Farouk, W., Omar, O. Ballistic Transport in Gate-All-Around Nanowire Transistors. The International Conference on Electrical Engineering, 2010; 7(7th International Conference on Electrical Engineering ICEENG 2010): 1-10. doi: 10.21608/iceeng.2010.33017
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