ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES

Document Type : Original Article

Authors

1 Md., Undergraduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.

2 Md., Undergraduate student, Department of Mathematics, University of Dhaka, Dhaka-1000, Bangladesh.

3 Md., Graduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.

4 Associate Professor, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.

Abstract

Abstract:
Gunn oscillation can occur via the transferred electron effect or the negative differential
mass effect. We have mathematically formulated the frequency response of a Gunn
diode operating in the transit time mode independent of the mechanism responsible for
Gunn oscillation in bulk semiconductors. Domain growth dynamics with space and
time, variation of domain velocity, and frequency response have been simulated for
Gallium Nitride (GaN) by using our mathematical equations. Our simulation shows that
gallium nitride based Gunn diodes at an active length of 5 micrometer can produce
frequency around 40 GHz for DC biasing 150 V.

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