DESIGN,IMPLEMENTATION AND VERIFICATION OF C-BAND GAAS MESFET OSCILLATOR

I., ABDALLA M.; M., MOSELHY A.; A., ABDEL-NAZEER; M., MAGHAWRY

doi:10.21608/iceeng.1999.62518

DESIGN,IMPLEMENTATION AND VERIFICATION OF C-BAND GAAS MESFET OSCILLATOR

Document Type : Original Article

Authors

¹ Associate Professor, Comm. Department, Zagazig University, Zagazig, Egypt.

² Ph. D., Comm. Department, Zagazig University, Zagazig, Egypt.

³ Ph. D., Armed Forces, Egypt.

⁴ Graduate student, Armed Forces, Egypt.

10.21608/iceeng.1999.62518

Abstract

In this paper, the Gain Saturation Approximation method is used for the design of a 4.5 GHz GaAs MESFET Oscillator. This method is based on S-Parameter simulation of the initial oscillator topology including the transistor model. A computer-aided-design was employed for optimizing and simulating the designed circuit to obtain the conditions of oscillation. To verify this work, the optimized circuit is fabricated, by using microstrip technology, and measured. The optimized circuit is also simulated using MDS program. Good agreement between simulation and measurement is obtained.

Keywords