ABSTRACT One of the deficiencies of many MOSFET models is that they are regional and can have discontinuities at the boundaries between regimes. This causes problems for deriving the conductance in circuit simulation. In this paper, a physical one-dimensional MOSFET model is developed. Discontinuities between linear and saturation regimes are avoided using one-region closed-form equation for the drain current. The strong inversion current-voltage (I-V) characteristics for submicron nchannel MOSFET which is suitable for circuit simulation and rapid process characterization are presented. The model is also suitable as a starting solution for two-dimensional numerical modeling. The resulting drain current is continuous over the entire operating range of the transistor. The calculated drain current is in agreement with publishing data using similar approaches.
S., A., M., H., & M., S. E. (2006). Modeling of Current-Voltage Characteristics of Deep Submicron MOSFET. The International Conference on Electrical Engineering, 5(5th International Conference on Electrical Engineering ICEENG 2006), 1-9. doi: 10.21608/iceeng.2006.33554
MLA
AL-Kabbani, A. S. S.; Hassan, M. F. M.; Serag El-Deen, M.. "Modeling of Current-Voltage Characteristics of Deep Submicron MOSFET", The International Conference on Electrical Engineering, 5, 5th International Conference on Electrical Engineering ICEENG 2006, 2006, 1-9. doi: 10.21608/iceeng.2006.33554
HARVARD
S., A., M., H., M., S. E. (2006). 'Modeling of Current-Voltage Characteristics of Deep Submicron MOSFET', The International Conference on Electrical Engineering, 5(5th International Conference on Electrical Engineering ICEENG 2006), pp. 1-9. doi: 10.21608/iceeng.2006.33554
VANCOUVER
S., A., M., H., M., S. E. Modeling of Current-Voltage Characteristics of Deep Submicron MOSFET. The International Conference on Electrical Engineering, 2006; 5(5th International Conference on Electrical Engineering ICEENG 2006): 1-9. doi: 10.21608/iceeng.2006.33554
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