Power minimization in CMOS RF mixers

Document Type : Original Article

Authors

1 Senior Member, IEEE., Modern Academy, Cairo, EGYPT.

2 Senior Member, IEEE., Arab Academy for Science, Technology & Maritime Transport, Alexandria, EGYPT, 21937.

Abstract

Abstract:
A new very low power RF mixer is introduced. The proposed mixer is based on two
techniques: A CMOS transistor pair is applied to the four cross-coupled
commutating transistor (the first technique), and current boosted technique, as
described in the paper. The CMOS mixer is simulated in 0.8 μm CMOS technology.
The mixer has an input signal of 0.2V and operates on a single 2.5V supply with
transistor threshold voltages of 0.57V for all NMOS transistors and -0.52V for all
PMOS transistors, and has a power dissipation of 2.3 mW.

Keywords