Abstract: In this paper, we have proposed a novel Silicon-On-Insulator (SOI) power MOSFET structure .This structure is a combination of two sub structures: a buried oxide step (BOS) and a buried oxide double step (BODS) that named asymmetrical buried oxide double step (ABODS). Using two-dimensional simulation, we have investigated the improvement in device performance focusing on the breakdown voltage. The ABODS structure exhibits a high breakdown voltage respected to other SOI structures at a much higher impurity concentration that can causes lower on-resistance (RON).
Orouji, A., Sharbati, S., & Fathipour, M. (2008). A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure. The International Conference on Electrical Engineering, 6(6th International Conference on Electrical Engineering ICEENG 2008), 1-7. doi: 10.21608/iceeng.2008.34313
MLA
Ali A. Orouji; Samaneh Sharbati; Morteza Fathipour. "A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure", The International Conference on Electrical Engineering, 6, 6th International Conference on Electrical Engineering ICEENG 2008, 2008, 1-7. doi: 10.21608/iceeng.2008.34313
HARVARD
Orouji, A., Sharbati, S., Fathipour, M. (2008). 'A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure', The International Conference on Electrical Engineering, 6(6th International Conference on Electrical Engineering ICEENG 2008), pp. 1-7. doi: 10.21608/iceeng.2008.34313
VANCOUVER
Orouji, A., Sharbati, S., Fathipour, M. A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure. The International Conference on Electrical Engineering, 2008; 6(6th International Conference on Electrical Engineering ICEENG 2008): 1-7. doi: 10.21608/iceeng.2008.34313
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