A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure

Document Type : Original Article

Authors

1 Electrical Engineering Department, Semnan University, Semnan, IRAN.

2 Electrical Engineering Department, Tehran University, Tehran, IRAN.

Abstract

Abstract:
In this paper, we have proposed a novel Silicon-On-Insulator (SOI) power MOSFET
structure .This structure is a combination of two sub structures: a buried oxide step
(BOS) and a buried oxide double step (BODS) that named asymmetrical buried oxide
double step (ABODS). Using two-dimensional simulation, we have investigated the
improvement in device performance focusing on the breakdown voltage. The ABODS
structure exhibits a high breakdown voltage respected to other SOI structures at a much
higher impurity concentration that can causes lower on-resistance (RON).

Keywords