Compact model for undoped symmetric double gate comprising quantization effect

Document Type : Original Article

Authors

1 Mentor Graphics.

2 Higher Institute of Technology, Benha University.

3 Ain Shams University.

4 French University in Egypt.

Abstract

Abstract:
In this paper we propose an analytical modification for Hu’s model which is an
analytical model for undoped symmetric double gate MOSFETs. This modification
targets to include the energy states quantization effect on the drain current. This leads to
correct the model behavior for ultra thin double gate. Moreover, we introduce a simple
method to include the velocity saturation effect in the current equation. Comparison
with device simulator results is finally presented to validate the proposed modifications.

Keywords