Electrical characterization of Al/methyl-red/Ag schottky diode

Document Type : Original Article

Authors

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi, NWFP 23640, Pakistan.

Abstract

Abstract:
This paper reports the fabrication and electrical characterization of surface type
Al/methyl-red/Ag Schottky barrier diode. Electrodes were deposited on glass substrate
with a narrow gap between them followed by spin coating of methyl-red (MR). A thin
film of MR was deposited from 10 wt% solution in benzene by spin coater at an angular
speed of 2000 revolution per minute (RPM) on a glass substrate with preliminary
deposited metal electrodes. The thickness of the film was 300 nm. The length and width
of the semiconducting channel between metallic electrodes were equal to 30 􀈝m and 17
mm, respectively. The current-voltage (I-V) characteristics of Al/MR/Ag structure
showed rectification behavior. The value of rectification ratio was found about 200 at ±4
V. I-V characteristics of Al/MR/Ag structure were also investigated as a function of
temperature ranging from 25-55 °C. The sample was also investigated as humidity
sensor at room temperature within the relative humidity (RH) range of 30-90%. The
impedance changed linearly and approximately reduced 5 orders of magnitude over the
whole humidity range. It was observed that under the effect of humidity the capacitance
of the MR film increased by 1.5 times over the whole humidity range.

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