Cu(II) 5,10,15,20-tetrakis(4-isopropylphenyl) porphyrin based photo capacitive Detectors

Document Type : Original Article

Authors

1 Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, District Swabi, N.W.F.P., 23460, Pakistan.

2 Institute of Chemistry, University of the Punjab, Lahore 54000, Pakistan.

3 Department of Chemistry, Government College of Science, Wahdat Road, Lahore, Pakistan.

Abstract

Abstract:
In this study a photosensitive organic semiconductor Cu(II) 5,10,15,20-tetrakis(4􀆍-
isopropylphenyl) porphyrin (CuTIPP) was synthesized and investigated as an active
material in photocapacitive detectors. Thin films of the CuTIPP were deposited by
sublimation on a glass substrate with preliminary deposited metal electrodes and
Al/CuTIPP/Al and Au/CuTIPP/Au surface type photocapacitive detectors were
fabricated. Thickness of the CuTIPP films was equal to 100 nm in the Al/CuTIPP/Al
and Au/CuTIPP/Au detectors. Length and width of the semiconducting channel between
metallic electrodes were equal to 40 􀈝m and 15 mm, respectively. It was observed that
under filament lamp illumination of up to 4000 lx the capacitance of the Al/CuTIPP/Al
and Au/CuTIPP/Au photocapacitive detectors increased by 2.6 and 2.2 times,
respectively, with respect to the dark conditions. The photoconductivity of the detectors
increased with illumination as well. It is assumed that the photocapacitive response of
the detectors is associated with polarization occurring due to the transfer of photogenerated
electrons and holes. The equivalent circuit of the photocapacitive detectors is
presented. Data obtained by simulation showed reasonable matching with experimental
results.

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